Triode/MOS tube/transistor/module

P-channel, -20V, -2A, 900mW

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 420@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj) 1L 420-800

Configuration N+P Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -4.5 VGS(th)(v) -2 RDS(ON)(m?)@4.347V 75 Qg( nC)@4.5V 12 QgS(nC) 1.5 Qgd(nC) 3 Ciss(pF) 500 Coss(pF) 66 Crss(pF) 32

NMOS, 40V/200A, RDS=2mR; the nominal 24V battery is dedicated for brushless controllers (for electric picks, high cost performance).

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