Triode/MOS tube/transistor/module

P-channel, -30V, -8A, 32mΩ@-10V

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NPN, Vceo=50V, Ic=150mA, hfe=120~240, silk screen: ALY

NPN, Vceo=17.5V, Ic=5A

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, P channel, withstand voltage: -20V, current: -30A, 10V internal resistance (Max): 4.5V internal resistance (Max): 0.04Ω, power: 40W