Triode/MOS tube/transistor/module

N-channel, 600V, 25A, 126mΩ@10V

Automotive Power MOSFET, 100V, 41A, 20 mΩ, Single N-Channel, DPAK, Logic Level AEC-Q101 Qualified MOSFET with Production Part Approval Program (PPAP) capability for automotive applications.

Semiconductor transistor field effect transistor MOS tube, TO-263, P channel, withstand voltage: -30V, current: -100A, 10V internal resistance (Max): 0.0075Ω, 4.5V internal resistance (Max): 0.012Ω, power: 90W

FET Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 80A On-resistance (RDS(on)@Vgs,Id): 9mΩ@10V, 80A

NPN, Vceo=50V, Ic=8A, hfe=200~400