Triode/MOS tube/transistor/module

N-channel, 100V, 85A, 7.5mΩ@10V

Type: N-channel Drain-source voltage (Vdss): 85V Continuous drain current (Id): 142A Power (Pd): 240W On-resistance (RDS(on)@Vgs,Id: 4.8mΩ@10V, 40A Threshold voltage ( Vgs(th)@Id): 2.6@250uA Gate charge (Qg@Vgs) 57nC@10V Input capacitance (Ciss@Vds): 3.895nF@40V, Vds=85v Id=142A Rds=4.8mΩ, operating temperature: - 55℃~+150℃@(Tj)

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 180 VGS(th)(v) 3 RDS(ON)(m?)@4.458V - Qg(nC)@4.5V - QgS(nC) 28 Qgd(nC) 34 Ciss(pF) 4426 Coss(pF) 1027 Crss(pF) 537

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