Triode/MOS tube/transistor/module

N-channel, 100V, 120A, 0.0038Ω@10V

N-channel, 150V, 25.4A, 74mΩ@10V

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.

MOS tube, DFN-8 5*6, P channel, withstand voltage: -30V, current: -70A, 10V internal resistance (Max): 7.5mΩ, power: 50W

Ultra high voltage MOS tube

P-channel 30V 3A

This PNP bipolar transistor is suitable for general purpose amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for low power surface mount applications.