Triode/MOS tube/transistor/module

N-channel, 600V, 68A, 0.03Ω@10V

Low-voltage MOSFET power supply, energy storage power supply, inverter and synchronous rectification in UPS circuit, Vds=60V Id=160A Rds=2.6mΩ (3.2mΩ max.) TO-220encapsulation

P-channel, -30V, -9A, 0.032Ω@-10V

600V,4A

SuperSOT-3 N-Channel Logic Level Enhancement Mode Field Effect Transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. These devices are ideal for low-voltage applications such as notebook computers, cell phones, PCMCIA cards, and other battery-powered circuits, where fast switching and low in-line power losses are required in very small surface-mount encapsulations.

NPN 175W 400V 10A Applications: Automotive ignition. Switching regulators. Motor control applications

PNP