Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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ST (STMicroelectronics)
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Convert Semiconductor
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SI (deep love)
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ST (STMicroelectronics)
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Cmos (Guangdong Field Effect Semiconductor)
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ST (STMicroelectronics)
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ST (Xianke)
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PNP, Vceo=25V, Ic=1.5mA, hfe=160~300
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APM (Jonway Microelectronics)
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Infineon (Infineon)
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onsemi (Ansemi)
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SuperFET MOSFETs are the first generation of high-voltage super-junction (SJ) MOSFET families utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.
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VBsemi (Wei Bi)
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N-channel, 30V, 18A, 4mΩ@10V
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CBI (Creation Foundation)
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CJ (Jiangsu Changdian/Changjing)
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MICROCHIP (US Microchip)
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ROHM (Rohm)
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
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