Triode/MOS tube/transistor/module
NCE (Wuxi New Clean Energy)
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DIODES (US and Taiwan)
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onsemi (Ansemi)
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SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.
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AnBon (AnBon)
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N-channel, 30V, 2.5A, 117mΩ@10V
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ROHM (Rohm)
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HUAYI (Hua Yi Wei)
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CJ (Jiangsu Changdian/Changjing)
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NPN, Vceo=160V, Ic=1A, hfe=160~320
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Wuxi Unisplendour
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Wuxi Unisplendour
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Infineon (Infineon)
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DIODES (US and Taiwan)
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Dual N-channel, 60V, 305mA
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YANGJIE (Yang Jie)
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Jilin Huawei
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VISHAY (Vishay)
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DIODES (US and Taiwan)
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FOSAN (Fuxin)
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onsemi (Ansemi)
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Infineon (Infineon)
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HUAKE (Huake)
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