Triode/MOS tube/transistor/module

NPN 80V 500mA silk screen 1GM MMBTA06 with the same function and pin length

800V 8A three-quadrant bidirectional thyristor High dv/dt anti-interference Applicable to inductive loads and occasions with serious electromagnetic interference

Replace AO3401A MOS tube_AO3481_3.5A30V_SOT23_AOS

Triode Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 80V Collector Current (Ic): 1A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 100@150mA, 2V BL 100-250 NPN, Vceo=80V, Ic=1A, hfe=100~250

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 28/35 Continuous Drain Current ID (A) 6

NPN, Vo=50V, Io=100mA

N channel

800V 25A

Configuration Single Type N-Ch VDS(V) 200 VGS(V) 20 ID(A)Max. 2 VGS(th)(v) 2.8 RDS(ON)(m?)@4.110V - Qg(nC)@4.5V - QgS(nC) 12.7 Qgd(nC) 16.3 Ciss(pF) 645 Coss(pF) 68 Crss(pF) 21

N-channel, 20V, 6A, 28mΩ@4.5V