Triode/MOS tube/transistor/module

N-channel, 60V, 4.1A, 68mΩ@10V

Automotive power MOSFETs for low power applications. -20V, -3.2A, 85 mΩ, single P-channel, SOT23. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

NPN, Vceo=100V, Ic=4A, hfe=100~200

P channel, Vds=-12V, Id=-6A

L file

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 65V Collector Current (Ic): 100mA Power (Pd): 250mW Collector Cutoff Current (Icbo): 15nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 200mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 150@10uA, 5V Characteristic frequency (fT): 100MHz Operating temperature: -55℃~+150℃@(Tj)

The original factory changed the model, and the performance is exactly the same. The corresponding old model is: FDN302P

N-channel, Vds=600V, Id=0.12A