Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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onsemi (Ansemi)
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These N-channel logic level MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.
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onsemi (Ansemi)
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30 V, 3.5 A, 75 mΩ, Single P-Channel, Power MOSFET, SOT-23
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NCE (Wuxi New Clean Energy)
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VBsemi (Wei Bi)
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Jilin Huawei
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AGM-Semi (core control source)
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General material, Vds=30V Id=46A Rds=5.8mΩ (8.0mΩ max) DFN3.3*3.3encapsulation;
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SPTECH (Shenzhen Quality Super)
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TWGMC (Taiwan Dijia)
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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 600mA Power (Pd): 150mW NPN, 40V, 600mA
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ST (STMicroelectronics)
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DIODES (US and Taiwan)
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MICROCHIP (US Microchip)
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VISHAY (Vishay)
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Infineon (Infineon)
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LRC (Leshan Radio)
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VBsemi (Wei Bi)
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SALLTECH (Sari)
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Cmos (Guangdong Field Effect Semiconductor)
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