Triode/MOS tube/transistor/module

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 76A Power (Pd): 89W On-resistance (RDS(on)@Vgs,Id: 7.0mΩ@10V, 20A Threshold voltage ( Vgs(th)@Id): 3V@250uA Gate charge (Qg@Vgs): 92nC@10V Input capacitance (Ciss@Vds): 3.9nF@30V, Vds=60v Id=76A Rds=7.0mΩ, operating temperature: -55℃~+150℃@(Tj)

N-channel, 100V, 31A, 26mΩ@10V

N-channel, 30V, 2.9A

NPN, Vceo=60V, IC=3A, PD=20W

Type N VDS(V) 20V VGS(V) ±12V Vth(V) 0.7V RDS(ON)(mΩ) 4.9mΩ ID(A) 60A

Type: N-Channel Drain-Source Voltage (Vdss): 85V Continuous Drain Current (Id): 142A Power (Pd): 240W On-Resistance (RDS(on)@Vgs,Id): 5.0mΩ@10V,40A Threshold Voltage (Vgs(th)@Id): 2.6V@250uA Gate charge (Qg@Vgs): 57nC@10V Input capacitance (Ciss@Vds): 3.895nF@40V, Vds=85V Id=142A Rds=5.0mΩ, working Temperature: -55℃~+150℃@(Tj);

These P-channel 1.8V specified MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance.