Triode/MOS tube/transistor/module

3 Quadrants TRIACs IT(RMS): 12A VGT≤1.3V: VDRM VRRM: 800V/1000V TJ: -40~125℃

N-channel, VDSS withstand voltage 20V, ID current 6A, RDON on-resistance 27mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.5-1.0V,

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.

NPN, Vceo=45V, Ic=0.1A, hfe=200~600

N-channel, 100V, 73A, 14mΩ@10V

Type N VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS44°C(A) 3 RDS(Max) 110 PD44°C(W) 1.25