Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
İstehsalçılar
DIODES (US and Taiwan)
İstehsalçılar
ROHM (Rohm)
İstehsalçılar
SPTECH (Shenzhen Quality Super)
İstehsalçılar
LRC (Leshan Radio)
İstehsalçılar
P channel -50V -130mA
Təsvir
JSMSEMI (Jiesheng Micro)
İstehsalçılar
TWGMC (Taiwan Dijia)
İstehsalçılar
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 160@100mA,1V
Təsvir
onsemi (Ansemi)
İstehsalçılar
This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.
Təsvir
VBsemi (Wei Bi)
İstehsalçılar
PUOLOP (Dipu)
İstehsalçılar
CJ (Jiangsu Changdian/Changjing)
İstehsalçılar
NPN, Vceo=160V, Ic=1.5A, hfe=100~200
Təsvir
HXY MOSFET (Huaxuanyang Electronics)
İstehsalçılar
JSMSEMI (Jiesheng Micro)
İstehsalçılar
BLUE ROCKET (blue arrow)
İstehsalçılar
onsemi (Ansemi)
İstehsalçılar
This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.
Təsvir
ElecSuper (Jingxin Micro)
İstehsalçılar
MCC (Meiweike)
İstehsalçılar