Triode/MOS tube/transistor/module

Industrial grade Widely used in various high-frequency power supply industries.

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P-channel, -30V, -16A, 10.6mΩ@-10V

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 30V, ID current 4.2A, RDON on-resistance 55mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.3V,

Dual N-channel, 20V, 7A

PNP

These P-channel 1.8V specified MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance.

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4A, 800V

Drain-source voltage (Vdss): -30V Continuous drain current (Id): -4A Power (Pd): 1.25W On-resistance (RDS(on)@Vgs,Id): 46mΩ@10V,4A

N-channel, 500V, 7.2A, 0.72Ω@10V