Triode/MOS tube/transistor/module

PNP

PNP, 50V, 150mA

Type P VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS76°C(A) 6.9 RDS(Max) 70 PD76°C(W) 2.8

N-channel, 40V, 304A, 0.9mΩ@10V

Type: N-Channel Drain-Source Voltage (Vdss): 85V Continuous Drain Current (Id): 120A Power (Pd): 173.6W On-Resistance (RDS(on)@Vgs,Id): 4.4mΩ@10V,50A Threshold Voltage (Vgs(th)@Id): 3.0V@250uA Gate Charge (Qg@Vgs): [email protected] Input Capacitance (Ciss@Vds): [email protected] , Vds=85V Id=120A Rds=4.4 mΩ, working temperature: -55℃~+150℃@(Tj)

The combination of low saturation voltage and high gain makes this bipolar transistor ideal for power-saving high-speed switching applications.