Triode/MOS tube/transistor/module

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 38/50 Continuous Drain Current ID (A) 5.1

NPN Vceo=30V Ic=0.5A PC=0.15W

Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -34 VGS(th)(v) -2 RDS(ON)(m?)@4.433V 38 Qg(nC) @4.5V - QgS(nC) 9.5 Qgd(nC) 14.5 Ciss(pF) 2480 Coss(pF) 268 Crss(pF) 126

N-channel, 55V, 30A, 14mΩ@10V

P-channel, -100V, -14A, 200mΩ@-10V

PNP, Vceo=-40V, Ic=-600mA, Silkscreen: M2B