Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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ST (Xianke)
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HUAYI (Hua Yi Wei)
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NCE (Wuxi New Clean Energy)
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VBsemi (Wei Bi)
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ROHM (Rohm)
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onsemi (Ansemi)
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This dual NPN bipolar transistor device is a spin-off of our popular SOT23, SOT323, SOT563 3-lead devices. The device is suitable for general-purpose amplifier applications and comes in a SOT963 six-lead surface-mount encapsulation. By putting two discrete devices into one encapsulation, the device is suitable for low power surface mount applications where board space is at a premium.
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PJSEMI (flat crystal micro)
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SHIKUES (Shike)
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JSMSEMI (Jiesheng Micro)
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ST (STMicroelectronics)
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UTC(Youshun)
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PNP, Vceo=-50V, Ic=-2A, hfe=200~400
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VBsemi (Wei Bi)
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
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DIODES (US and Taiwan)
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APM (Jonway Microelectronics)
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WILLSEMI (Will)
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GOFORD (valley peak)
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Leiditech (Lei Mao Electronics)
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