Triode/MOS tube/transistor/module

Transistor type: 2 PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW DC current gain (hFE@Ic,Vce): 100@10mA,1V

N-channel, 500V, 0.28?@10V, 17A

N-channel, 800V, 7.8A, 1.2Ω@10V

NPN

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

40V 130A 1.9 milliohm N-channel MOS

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N-channel, 500V, 4.5A

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -5.3 VGS(th)(v) -0.75 RDS(ON)(m?)@4.86V 58 Qg(nC) @4.5V 6.2 QgS(nC) 2.2 Qgd(nC) 1.8 Ciss(pF) 575 Coss(pF) 98 Crss(pF) 75