Triode/MOS tube/transistor/module

MOSFET, Small Signal, 60 V, 380mA, Single N-Channel, SOT-23

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 50A Power (Pd): 68W On-Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,12A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 30.5nC@10V Input capacitance (Ciss@Vds): 1.09nF@50V, Vds=100V Id=50A Rds=12mΩ, operating temperature : -55℃~+150℃@(Tj) DFN5*6encapsulation;

This P-channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It is optimized for power management applications requiring wide gate drive voltage ratings (4.5V – 20V).