Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 22 VGS(th)(v) 1.5 RDS(ON)(m?)@4.392V 58 Qg(nC)@4.5V - QgS(nC) 3 Qgd(nC) 9 Ciss(pF) 840 Coss(pF) 115 Crss(pF) 80

This P-channel logic level MOSFET is produced using the advanced PowerTrench process. This product is ideal for battery management applications.