Triode/MOS tube/transistor/module

N-channel, 100V, 1.3A, 270mΩ@10V

Type N VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS57°C(A) 12 RDS(Max) 18 PD57°C(W) 2.8

SCR, 600v, 300ma

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 420@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

NPN, 50V, 3A, SOT89

P-channel, 50V, 180mA

NPN+PNP, Vceo=45V, Ic=100mA, hfe=200~450