Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -5.8 VGS(th)(v) -1.8 RDS(ON)(m?)@4.94V 62 Qg(nC) @4.5V 6.4 QgS(nC) 2.3 Qgd(nC) 1.9 Ciss(pF) 583 Coss(pF) 100 Crss(pF) 80

P-channel, -30V, -5.6A, 46mΩ@-10V

RF application, N channel, 10V, 0.5A

N-channel 40V 15.6mΩ@4.5V

DTC124EUA-F2-0000HF

This P-channel 2.5V specified MOSFET is produced using the PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. Suitable for applications where larger encapsulations are not possible, these devices offer excellent power dissipation in a very small footprint.

Type: 2 N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 5A On-resistance (RDS(on)@Vgs,Id): 0.022Ω@4.5V,5A Threshold voltage (Vgs( th)@Id): 1V@250μA

YJG105N03A-F1-0100HF