Triode/MOS tube/transistor/module

20V/0.56A N-channel

This NPN bipolar Darlington transistor is suitable for switching applications such as printing hammers, relays, solenoid valves, and lamp drivers. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

VCES(V) 650 IC(A)@155℃ 75 VCE(sat)(V) 1.8 E(off)(mj) - Vf(V) 2

PNP, Vceo=-30V, IC=-3A, PD=10W

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These N and P-channel MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Suitable for applications where more expensive SO-8 and TSSOP-8 encapsulations are not possible, these devices offer superior power dissipation in a very small footprint.

This N-channel 2.5V specified MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize the on-resistance while maintaining low gate charge for excellent switching performance. This device offers superior power dissipation in a very small footprint compared to larger SO-8 and TSSOP-8 encapsulations.