Triode/MOS tube/transistor/module

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 300V Collector Current (Ic): 200mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 250nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 200mV@20mA, 2mA DC current gain (hFE@Ic,Vce): 100@10mA, 10V Characteristic frequency (fT): 50MHz Operating temperature: +150℃@(Tj)

NPN, Vceo=50V, Ic=100mA, hfe=80~200

N-channel, 150V, 4.8A, 85mΩ@10V

MOSFET N-CH 150V

MOSFET N-CH 150V

NPN - pre-biased, VCC=50V, Ic=100mA