Triode/MOS tube/transistor/module

PNP

DTC143XCA-F2-0000HF

PNP, Vceo=-20V, Ic=-1A

MOSF@@low voltage MOSF 60V50A 13.5m?

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 125@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)?

MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±12 Vth(V) 1-3 On-Resistance RDS(ON) (mΩ) 9.5/11.5 Continuous Drain Current ID (A) 11.8

150V/ 3A@TC=25℃/ N-channel

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

N-channel, 60V, 115mA, 5Ω@10V