Triode/MOS tube/transistor/module

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 220@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

NPN

P-channel, -20V, ±2.5A, 22mΩ@-4.5V

Darlington driver, 8-channel (8-ch)

Dual N-channel, 30V, 1A, 190mΩ@10V

N-channel, 30V, 90A, 3.3mΩ@10V

ULN2003A High Voltage, High Current Darlington Transistor Array

P channel -30V -6A

N-channel 100V 61A