Triode/MOS tube/transistor/module
WEIDA (Weida)
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ST (STMicroelectronics)
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DIODES (US and Taiwan)
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Convert Semiconductor
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ST (STMicroelectronics)
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MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 27/35 Continuous Drain Current ID (A) 12
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Convert Semiconductor
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HUAYI (Hua Yi Wei)
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FUXINSEMI (Fuxin Senmei)
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DIODES (US and Taiwan)
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GOFORD (valley peak)
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LOWPOWER (Weiyuan Semiconductor)
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VISHAY (Vishay)
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onsemi (Ansemi)
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This family of plastic, mid-power NPN transistors can be used in amplifier and switching applications.
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LRC (Leshan Radio)
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PNP, Vceo=50V, Ic=100mA, hfe=80~140
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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This N-channel enhancement mode MOSFET is produced using a patented high cell density DMOS technology. This product minimizes on-resistance while providing robust, reliable and fast switching performance. The BSS123 is especially suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
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HGC (Shenzhen Hanxin)
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