Triode/MOS tube/transistor/module

VO=±50V;IO=±100mA NPN/PNP built-in bias resistor

P-channel, -60V, -5A, 58mΩ@10V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 300mW DC Current Gain (hFE@Ic,Vce): 110@2mA,5V

N channel + P channel

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology enables the lowest on-resistance per silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode, and the diode has a very short reverse recovery time and very low stored charge. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.