Triode/MOS tube/transistor/module

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This N-channel 2.5V specified MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize the on-resistance while maintaining low gate charge for excellent switching performance.

CSD18501Q5A 40V, N-Channel NexFET MOSFET™, Single SON5x6, 3.2mΩ

NPN, Vcc=50V, Ic=50mA, Pd=200mW

This complementary device is used in medium power amplifiers and switches requiring up to 500 mA collector current. Derived from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.

P-channel, -60V, -35A, 48mΩ@-10V

N-channel, 30V, 4A, 52mΩ@10V

P-channel, -30V, -3.2A, 120mΩ@-4.5V

N-channel, 650V, 10A