Triode/MOS tube/transistor/module

PNP, Vceo=-70V, Ic=-2.5A

PNP, Vceo=-50V, Ic=-150mA, hfe=180~390

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Voltage VDSS650V, conduction resistance Rds0.38 milliohms, charge Qg14nC, current ID11A

BLDC (brushless motor) recommended material, Vds=40V Id=120A Rds=2.7mΩ (3.7mΩ max) TO-252encapsulation;

This device is specifically designed for battery charging or load switching in cell phones and other ultra-portable applications. It has a MOSFET with low on-resistance. MicroFET 2x2 encapsulation provides excellent thermal performance for its physical size, making it ideal for linear mode applications.