Triode/MOS tube/transistor/module

IC(A) 0.1 VCEO(V) 45 hFE(β) 200-1000 fT(MHZ) 150 VCBO(V) 50 VCE(sat)(W) 0.3 Type NPN

This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices.

Dual N-channel, 60V, 320mA

Type: P-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 8.8A Power (Pd): 50W On-resistance (RDS(on)@Vgs,Id): 75mΩ@10V, 5.3A

Semiconductor Transistor Field Effect Transistor MOS tube, SOT-23, N channel, withstand voltage: 100V, current: 4.5A, 10V internal resistance (Max): 0.103Ω, 4.5V internal resistance (Max): 0.108Ω, power: 3W

Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -30 VGS(th)(v) -1.7 RDS(ON)(m?)@4.432V - Qg(nC) @4.5V - QgS(nC) 9 Qgd(nC) 6 Ciss(pF) 3029 Coss(pF) 129 Crss(pF) 76

N channel