onsemi (Ansemi)

TO-220AB-3

Tube

50

These N-channel power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. Such transistors can be run directly in integrated circuits. The previous development model was TA09526.