Optocoupler/LED/nixie tube/photoelectric device

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector in a small surface mountable plastic encapsulation. They are ideal for high-density applications and do not require board mounting.

The FODM301X, FODM302X and FODM305X series include a Gallium Arsenide Infrared Emitting Diode to drive a silicon bidirectional switch in a compact 4-pin mini-flat encapsulation. The pin pitch is 2.54mm. They are designed for the interface between electronic controls and power triacs to control resistive and inductive loads operating at 115V/240V.

The FOD3120 is a 2.5A output current gate drive optocoupler capable of driving most 800V/20A IGBT/MOSFETs. It is suitable for fast switching drive of power IGBTs and MOSFETs used in motor control inverter applications and high performance power systems. It utilizes ON Semiconductor's proprietary coplanar encapsulation technology Optoplanar and optimized IC design to achieve high noise immunity with high common-mode rejection characteristics. It consists of a gallium aluminum arsenide (AlGaAs) light-emitting diode (LED) optically coupled to an integrated circuit with a high-speed driver for a push-pull MOSFET output stage.