Optocoupler/LED/nixie tube/photoelectric device

These devices consist of a Gallium Arsenide infrared light-emitting diode optically coupled to a monolithic silicon phototransistor detector in a small surface-mount plastic encapsulation. It is suitable for high-density applications without the need for through-board mounting.

The FOD420, FOD4208, FOD4216, and FOD4218 devices consist of an infrared light-emitting diode coupled to a hybrid random-phase triac consisting of two antiparallel SCRs with a triac capable of driving a discrete triac. terminal triac function. The FOD4216 and FOD4218 use high-efficiency infrared LEDs for higher trigger sensitivity. These devices use a standard 6-pin dual-inline plug-in (DIP) encapsulation.

The FOD3125 is a 2.5 A output current gate drive optocoupler capable of driving medium power IGBT/MOSFET up to 125°C. It is suitable for fast switching drive of power IGBTs and MOSFETs used in motor control inverter applications and high performance power systems. It utilizes ON Semiconductor's coplanar encapsulation technology Optoplanar and optimized IC design to achieve high noise immunity with high common-mode rejection specified characteristics. It consists of a gallium aluminum arsenide (AlGaAs) light-emitting diode optically coupled to an integrated circuit with a high-speed driver for a push-pull MOSFET output stage.