Optocoupler/LED/nixie tube/photoelectric device

4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor type optocoupler opto-isolators. Gallium Arsenide Infrared Emitting Diodes are coupled to high voltage NPN silicon phototransistors. The device uses standard plastic six-pin dual-row plug-in encapsulation.

The 6N138M/9M and HCPL2730M/31M ​​optocouplers consist of an AlGaAs LED optically coupled to a high gain split Darlington photodetector. The split Darlington configuration separates the input photodiode and first-order gain from the output transistor, allowing for lower output saturation voltage and faster operation than conventional Darlington optocouplers. In the dual-channel devices HCPL2730M/HCPL2731M, the integrated emitter-base resistor has excellent stability over temperature. The combination of an extremely low input current of 0.5mA and a high current transfer ratio of 2000% makes this series ideal for use as an input interface for MOS, CMOS, LSTTL and EIA RS232C, while ensuring output compatibility to CMOS and high fanout TTL requirements. Internal interference shielding with excellent common-mode rejection of 10 kV/µs.