Optocoupler/LED/nixie tube/photoelectric device

These devices consist of a gallium arsenide infrared light emitting diode optically coupled to a monolithic silicon phototransistor detector in a small surface mount plastic encapsulation. It is suitable for high-density applications without the need for through-board mounting.

The HCPL-0700, HCPL-0701, HCPL-0730, and HCPL-0731 optocouplers consist of an AlGaAs LED optically coupled to a high-gain split Darlington photodetector in a compact 8-pin small-outline encapsulation. The HCPL-0730 and HCPL-0731 devices have two channels per encapsulation for optimal packing density. This split Darlington configuration separates the input photodiode and first-stage gain from the output transistor, allowing for lower output saturation voltage and higher operating speed than conventional Darlington phototransistor optocouplers. The combination of very low input current of 0.5mA and high current transfer ratio of 2000% makes this series ideal for MOS, CMOS, LSTTL and EIA RS232C input interfaces while ensuring output compatibility to CMOS and high fanout TTL requirements.

The MOCD207M device consists of two Gallium Arsenide Infrared Emitting Diodes optically coupled to two monolithic silicon phototransistor detectors in a small surface mount plastic encapsulation. It is suitable for high-density applications without the need for through-board mounting.

The FOD8318 is an advanced 2.5µA output current IGBT driver optocoupler capable of driving most 1200V/150A IGBTs. It is suitable for fast switching drive of power IGBTs and MOSFETs used in motor control inverter applications and high performance power systems. It includes an integrated gate drive optocoupler with low RDS(ON) CMOS transistors to drive the IGBT between rails and a high speed isolated feedback for fault sensing. The FOD8318 features an active Miller clamp to turn off the IGBT at high dv/dt without negative supply voltage. It provides the important protection features needed to protect against fault conditions that lead to destructive thermal dissipation of the IGBT. It utilizes ON Semiconductor's proprietary coplanar Optoplanar encapsulation technology and optimized IC design to achieve high noise immunity with high common-mode rejection and power supply rejection specifications. The device is encapsulated in a compact 16-pin small plastic encapsulation and meets 8mm creepage and spacing requirements.