Triode/MOS tube/transistor/module

N-channel, 40V, 190A

Semiconductor Transistor Field Effect Transistor MOS tube, TO-220, N channel, withstand voltage: 40V, current: 100A, 10V internal resistance (Max): 0.0058Ω, 4.5V internal resistance (Max): 0.0075Ω, power: 90W

N-channel, 200V, 40A

N-Channel, PowerTrench MOSFET, 80V, 110A, 2.4mΩ

BJT NPN Collector-Emitter Breakdown Voltage (Vceo): 100V Collector Current (Ic): 6A Power (Pd): 2W Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.5V@6A, 600mA DC current gain (hFE@Ic,Vce): 15@3A,4V Characteristic frequency (fT): 3MHz Operating temperature: +150℃@(Tj)

N-channel, 600V, 9.1A, 460mΩ@10V

N-ch MOS 30V 7.5A

These devices feature high current gain and low saturation voltage with up to 3 A of continuous collector current.

-20V/-0.5A /Dual P