Triode/MOS tube/transistor/module

MOS tube, TO-263, N channel, withstand voltage: 30V, current: 180A, 10V internal resistance (Max): 2.7mΩ, power: 150W

N-channel, 30V, 3.8A, 55mΩ@10V

NPN,Vceo=25V,Ic=1.5A

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Configuration Dual Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 12 VGS(th)(v) 1.8 RDS(ON)(m?)@4.304V 80 Qg(nC)@4.5V - QgS(nC) 2.9 Qgd(nC) 1.5 Ciss(pF) 1055 Coss(pF) 58 Crss(pF) 42

P-Channel Enhancement Mode Power MOSFET - VDS = -20V, ID = -3.5A

This N-channel 2.5V specified MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize the on-resistance while maintaining low gate charge for excellent switching performance.