Triode/MOS tube/transistor/module

Two PNP tubes

NPN, Vceo=12V, Ic=30mA, hfe=20~70

PNP, Vceo=-30V, Ic=-3A, hfe=160~320

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Added G-S Zener to increase ESD voltage level.

MOS, N-channel, 840, 8N50, 500V, 8A, 0.95Ω(Max)

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.