Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 12 ID(A)Max. -5.5 VGS(th)(v) - RDS(ON)(m?)@4.92V 50 Qg(nC)@ 4.5V 6.4 QgS(nC) 2.3 Qgd(nC) 1.9 Ciss(pF) 583 Coss(pF) 100 Crss(pF) 80

NMOS 30V 300mA RDS(on)=8Ω WITH ESD SOT-323

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 5A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 35mΩ@10V,5A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 5.2nC@10V Input Capacitance (Ciss@Vds): 0.48nF@20V Operating Temperature: -55℃~+150℃@( Tj)

PNP, Vceo=-160V, Ic=-1.5A, hfe=100~200

High Gain Low Voltage PNP Power Transistor

Drain-source voltage (Vdss): 30V Continuous drain current (Id): 83.5A Power (Pd): 36W On-resistance (RDS(on)@Vgs,Id): 2.5mΩ@10V,20A