Triode/MOS tube/transistor/module

N-channel, 1500V, 2.5A

General materials (low voltage MOSFET power supply, energy storage power supply, etc.), Vds=30V Id=13A Rds=6.5mΩ (9.5mΩ maximum) SOP-8encapsulation;

N+N channel, VDSS withstand voltage 40V, ID current 12A, RDON on-resistance 16mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.0V,

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This process is specially designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of SuperFET II FRFET MOSFETs can eliminate additional components and improve system reliability.