Triode/MOS tube/transistor/module
SINO-IC (Coslight Core)
İstehsalçılar
High Diode (Hyde)
İstehsalçılar
P-channel, -20V, -2.3A, 110mΩ@-4.5V
Təsvir
FMS (beautiful micro)
İstehsalçılar
NPN,Vceo=45V,Ic=100mA
Təsvir
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.3/0.6/1.0 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 60
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YFW (You Feng Wei)
İstehsalçılar
RealChip (Shenxin Semiconductor)
İstehsalçılar
N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 0.17A Power (Pd): 0.35W On-resistance (RDS(on)Max@Vgs,Id): 6Ω@10V, 0.17A
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PJSEMI (flat crystal micro)
İstehsalçılar
P channel -30V -4.1A
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CJ (Jiangsu Changdian/Changjing)
İstehsalçılar
TOSHIBA (Toshiba)
İstehsalçılar
New product, ULN2803APG (C5252) upgraded product, field effect tube as output tube, lower tube voltage drop, less chip heat generation, better driving performance.
Təsvir
VBsemi (Wei Bi)
İstehsalçılar
HXY MOSFET (Huaxuanyang Electronics)
İstehsalçılar
Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 40V, ID current 5A, RDON on-resistance 85mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-3.0V
Təsvir
UMW (Friends Taiwan Semiconductor)
İstehsalçılar
Infineon (Infineon)
İstehsalçılar
VISHAY (Vishay)
İstehsalçılar
Samwin (Semipower)
İstehsalçılar
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.7-1.2 On-Resistance RDS(ON) (mΩ) 33/38 Continuous Drain Current ID (A) 4
Təsvir
MSKSEMI (Mesenco)
İstehsalçılar
JSMSEMI (Jiesheng Micro)
İstehsalçılar