Triode/MOS tube/transistor/module

P channel -30V -11A

Configuration Single Type P-Ch VDS(V) -15 VGS(V) 12 ID(A)Max. -4.4 VGS(th)(v) -0.7 RDS(ON)(m?)@4.35V 40 Qg(nC) @4.5V 7.8 QgS(nC) 1.2 Qgd(nC) 1.6 Ciss(pF) 738 Coss(pF) 280 Crss(pF) 190

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

NPN Vceo=300V Ic=0.5A PC=0.625W large voltage

N tube 650V 11A TO-220F 380mΩ

IGBT module

N-channel, 100V, 6.4A, 40mΩ@10V