Triode/MOS tube/transistor/module

N-channel, 800V, 2A, 2.7Ω@10V

45V, 1A, PNP transistor, hFE=100-250

NPN,Vceo=300V,Ic=0.5A

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

PNP, Vceo=-50V, Ic=-5A