Triode/MOS tube/transistor/module

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 200mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 100@10mA,1V 1AM 100-300 NPN ,Vceo=40V,Ic=0.2A,hfe=100~300,