Triode/MOS tube/transistor/module
PANJIT (Qiangmao)
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LONTEN (Longteng Semiconductor)
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CJ (Jiangsu Changdian/Changjing)
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P-channel, -30V, -4.2A, 60mΩ@-10V
Təsvir
APEC (Fuding)
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APM (Jonway Microelectronics)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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P-channel, -30V, -9.8A, 11mΩ@-20V
Təsvir
Hottech (Heketai)
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Infineon (Infineon)
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P-channel, -150V, -13A, 0.295Ω@-10V
Təsvir
SI (deep love)
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ROHM (Rohm)
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YANGJIE (Yang Jie)
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Infineon (Infineon)
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Wuxi Unisplendour
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JSMSEMI (Jiesheng Micro)
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PANJIT (Qiangmao)
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NCE (Wuxi New Clean Energy)
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onsemi (Ansemi)
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This device is specifically designed as a single encapsulation solution for battery charging switches in cell phones and other ultra-portable applications. It features two independent P-channel MOSFETs with low on-resistance for lowest conduction losses. When connected in a typical common source configuration, bidirectional current flow is possible. MicroFET 2x2 encapsulation provides excellent thermal performance for its physical size, making it ideal for linear mode applications.
Təsvir
ISC (Wuxi Solid Electric)
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