Triode/MOS tube/transistor/module

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

PNP, Vceo=-40V, Ic=-200mA

NPN

P-channel, -30V, -14.5A

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

This Insulated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop (FS) trench structure that provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses .

NPN, Vcc=50V, Io=100mA, Pd=200mW

N-channel, 30V, 5A, 32mΩ@10V