Triode/MOS tube/transistor/module

Type P VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS53°C(A) 10 RDS(Max) 34 PD53°C(W) 2.8

Transistor Type: 1 PNP - Pre-biased Power (Pd): 150mW Collector Current (Ic): 100mA Min Input Voltage (VI(on)@Ic/Io,Vce/Vo): 1.4V@1mA, 0.3V Max Input voltage (VI(off)@Ic/Io,Vce/Vcc): 300mV@100uA, 5V Output voltage (VO(on)@Io/Ii): 300mV@5mA, 0.25mA

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 200mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@800mA, 80mA DC current gain (hFE@Ic,Vce): 120@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj))

PNP

N-channel 30V 3.6A