Triode/MOS tube/transistor/module

NPN, Vceo=160V, Ic=1.5A, hfe=100~200

N channel

N-channel, 800V, 8A, 1.45Ω@10V

N-channel drain-source voltage (Vdss): 20V Continuous drain current (Id): 6.5A Power (Pd): 1.2W On-resistance (RDS(on)@Vgs,Id): 22mΩ@4.5V, 6.5A, Threshold voltage (Vgs(th)@Id): 1V@250uA N-channel, 20V, 6.5A, 22mΩ@4.5V

Power MOSFET, 60V, 250A, 1.3mΩ, Single N-Channel, SO-8FL, Logic Level